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2N4339-E3
JFET Transistor, Junction Field Effect, -57 V, 1.5 mA, -1.8 V, TO-206AA, 3 Pin, 175 °C
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No2N4339-E3
Newark Part No.06J8862
Technical Datasheet
Gate Source Breakdown Voltage Max-57V
Breakdown Voltage Vbr-57V
Zero Gate Voltage Drain Current Idss Min500µA
Zero Gate Voltage Drain Current Max1.5mA
Gate Source Cutoff Voltage Max-1.8V
Transistor Case StyleTO-206AA
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingThrough Hole
Operating Temperature Max175°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Technical Specifications
Gate Source Breakdown Voltage Max
-57V
Zero Gate Voltage Drain Current Idss Min
500µA
Gate Source Cutoff Voltage Max
-1.8V
Transistor Type
JFET
Channel Type
N Channel
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Breakdown Voltage Vbr
-57V
Zero Gate Voltage Drain Current Max
1.5mA
Transistor Case Style
TO-206AA
No. of Pins
3 Pin
Transistor Mounting
Through Hole
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate