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2SK3878(F)
MOSFET, N CHANNEL, 900V, 9A, SC-65
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part No2SK3878(F)
Newark Part No.15R2833
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SK3878(F)
Newark Part No.15R2833
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id9A
On Resistance Rds(on)1.3ohm
Drain Source On State Resistance1.3ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The 2SK3878(F) is a 900V N-channel silicon Field Effect Transistor designed for switching regulator applications.
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
- 900V Drain to gate voltage
- ±30V Gate to source voltage
- 0.833°C/W Thermal resistance, junction to case
- 50°C/W Thermal resistance, junction to ambient
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.3ohm
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2020)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate