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SKM195GB063DN
IGBT Module, 250 A, 600 V, 150 °C, Module
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ManufacturerSEMIKRON
Manufacturer Part NoSKM195GB063DN
Newark Part No.02M8589
Your Part Number
Technical Datasheet
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM195GB063DN
Newark Part No.02M8589
Technical Datasheet
IGBT Configuration-
Transistor PolarityN Channel
DC Collector Current250A
Continuous Collector Current250A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
-
DC Collector Current
250A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
250A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate