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NVMFS5113PLT1G
Power MOSFET, P Channel, 60 V, 64 A, 0.0105 ohm, DFN, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.990 |
| 10+ | $2.080 |
| 25+ | $1.890 |
| 50+ | $1.710 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS5113PLT1G
Newark Part No.42AC1833
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id64A
On Resistance Rds(on)0.0105ohm
Drain Source On State Resistance0.0105ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max2.5V
Power Dissipation150W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0105ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead
Channel Type
P Channel
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.0105ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65