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NVMFD5873NLT1G
MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFD5873NLT1G
Newark Part No.31AC1104
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel58A
Continuous Drain Current Id P Channel58A
Drain Source On State Resistance N Channel0.0107ohm
Drain Source On State Resistance P Channel0.0107ohm
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation N Channel107W
Power Dissipation P Channel107W
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
58A
Drain Source On State Resistance P Channel
0.0107ohm
No. of Pins
8Pins
Power Dissipation P Channel
107W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
58A
Drain Source On State Resistance N Channel
0.0107ohm
Transistor Case Style
DFN
Power Dissipation N Channel
107W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability