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NSBC123JDP6T5G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 2 week(s)
| Quantity | Price |
|---|---|
| 5000+ | $0.079 |
Price for:Each (Supplied on Cut Tape)
Minimum: 8000
Multiple: 8000
$632.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBC123JDP6T5G
Newark Part No.49X8966
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-963
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation408mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
-
Transistor Case Style
SOT-963
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
408mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate