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NSBA123JDP6T5G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual PNP, 50 V, 100 mA
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBA123JDP6T5G
Newark Part No.49X8924
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-963
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation408mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
-
Transistor Case Style
SOT-963
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
408mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate