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NSBA123EDXV6T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual PNP, 50 V, 100 mA
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ManufacturerONSEMI
Manufacturer Part NoNSBA123EDXV6T1G
Newark Part No.49X8922
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 1 week(s)
Packaging Options
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBA123EDXV6T1G
Newark Part No.49X8922
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-563
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation500mW
Operating Temperature Max150°C
DC Current Gain hFE Min8hFE
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
-
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
500mW
DC Current Gain hFE Min
8hFE
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate