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MJE802G
Darlington Transistor, Darlington, NPN, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMJE802G
Newark Part No.26K4472
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE802G
Newark Part No.26K4472
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current4A
Transition Frequency-
Power Dissipation40W
No. of Pins3Pins
Transistor MountingThrough Hole
Transistor Case StyleTO-225
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Qualification-
Product Range-
MSL-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The MJE802G is a 4A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications.
- Complementary device
- Monolithic construction with built-in base-emitter resistors to limit leakage multiplication
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Transition Frequency
-
No. of Pins
3Pins
Transistor Case Style
TO-225
DC Current Gain hFE Min
750hFE
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
4A
Power Dissipation
40W
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
