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MJ4502G
Bipolar (BJT) Single Transistor, PNP, 100 V, 30 A, 200 W, TO-204AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMJ4502G
Newark Part No.59AC7151
Your Part Number
Technical Datasheet
1 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $9.340 |
| 10+ | $6.540 |
| 25+ | $5.880 |
| 50+ | $5.230 |
| 100+ | $4.760 |
Price for:Each
Minimum: 1
Multiple: 1
$9.34
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ4502G
Newark Part No.59AC7151
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current30A
Power Dissipation Pd200W
Power Dissipation200W
DC Collector Current30A
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
DC Current Gain hFE100hFE
No. of Pins2Pins
Transition Frequency2MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The MJ4502G is a PNP Silicon High-Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel. This transistor is complement to the NPN MJ802 transistor.
- High DC current gain
- Excellent safe operating area
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
100V
Power Dissipation Pd
200W
DC Collector Current
30A
Transistor Mounting
Through Hole
No. of Pins
2Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
30A
Power Dissipation
200W
Transistor Case Style
TO-204AA
DC Current Gain hFE
100hFE
Transition Frequency
2MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
