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FQPF7N80C
Power MOSFET, N Channel, 800 V, 6.6 A, 1.57 ohm, TO-220F, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQPF7N80C
Newark Part No.84H4766
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF7N80C
Newark Part No.84H4766
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id6.6A
Drain Source On State Resistance1.57ohm
On Resistance Rds(on)1.57ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd56W
Power Dissipation56W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
- N-Channel, QFET®Power MOSFET in TO-220 package
- 6.6A, 800V, RDS(on) = 1.9Ω(maximum) at VGS = 10V, ID = 3.3A
- Low gate charge ( Typ. 27nC)
- Low Crss ( Typ 10pF)
- 100% avalanche tested
- Provide superior switching performance and high avalanche energy strength
- Suitable for SMPS, active power factor correction (PFC), and electronic lamp ballasts
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.57ohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation Pd
56W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
6.6A
On Resistance Rds(on)
1.57ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
56W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate