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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF33N10L
Newark Part No.54AH8764
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id18A
Drain Source On State Resistance0.052ohm
On Resistance Rds(on)0.039ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd41W
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.052ohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation Pd
41W
No. of Pins
3Pins
Product Range
QFET
SVHC
No SVHC (15-Jan-2018)
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.039ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation
41W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate