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FQD7N10LTM
MOSFET Transistor, N Channel, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V RoHS Compliant: Yes
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ManufacturerONSEMI
Manufacturer Part NoFQD7N10LTM
Newark Part No.31Y1530
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD7N10LTM
Newark Part No.31Y1530
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.8A
On Resistance Rds(on)0.275ohm
Drain Source On State Resistance0.275ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Power Dissipation Pd25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2022)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.275ohm
Transistor Case Style
TO-252AA
Power Dissipation Pd
25W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5.8A
Drain Source On State Resistance
0.275ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate