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FDG6332C
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDG6332C
Newark Part No.
Full Reel67R2051
Cut Tape82C2485
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Packaging Options
Cut Tape
| Quantity | Price |
|---|---|
| 2500+ | $0.251 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.273 |
| 6000+ | $0.245 |
| 12000+ | $0.225 |
| 18000+ | $0.212 |
| 30000+ | $0.198 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6332C
Newark Part No.
Full Reel67R2051
Cut Tape82C2485
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id700mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
700mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for FDG6332C
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
