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MT53E128M32D2FW-053 AUT ES:A
DRAM, Mobile LPDDR4, 4 Gbit, 128M x 32bit, 1.866 GHz, TFBGA, 200 Pins
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ManufacturerMICRON
Manufacturer Part NoMT53E128M32D2FW-053 AUT ES:A
Newark Part No.80AH8326
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 52 week(s)
Non-Cancellable / Non-Returnable
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E128M32D2FW-053 AUT ES:A
Newark Part No.80AH8326
Technical Datasheet
DRAM TypeMobile LPDDR4
DRAM Density4Gbit
Memory Density4Gbit
DRAM Memory Configuration128M x 32bit
Memory Configuration128M x 32bit
Clock Frequency1.866GHz
Clock Frequency Max1.866GHz
IC Case / PackageTFBGA
Memory Case StyleTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time535ps
IC MountingSurface Mount
Operating Temperature Min-40Ā°C
Operating Temperature Max125Ā°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Density
4Gbit
Memory Configuration
128M x 32bit
Clock Frequency Max
1.866GHz
Memory Case Style
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
125Ā°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
4Gbit
DRAM Memory Configuration
128M x 32bit
Clock Frequency
1.866GHz
IC Case / Package
TFBGA
No. of Pins
200Pins
Access Time
535ps
Operating Temperature Min
-40Ā°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate