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MT29F512G08EBHAFJ4-3R:A
Flash Memory, TLC NAND, 512 Gbit, 64G x 8bit, Parallel, VBGA, 132 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT29F512G08EBHAFJ4-3R:A
Newark Part No.80AH7809
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 55 week(s)
Product Information
ManufacturerMICRON
Manufacturer Part NoMT29F512G08EBHAFJ4-3R:A
Newark Part No.80AH7809
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
Flash Memory TypeTLC NAND
Memory Density512Gbit
Memory Size512Gbit
Flash Memory Configuration64G x 8bit
Memory Configuration64G x 8bit
InterfacesParallel
IC Interface TypeParallel
IC Case / PackageVBGA
Memory Case StyleVBGA
No. of Pins132Pins
Clock Frequency Max333MHz
Clock Frequency333MHz
Access Time-
Supply Voltage Min-
Supply Voltage Max-
Operating Temperature Min0°C
Operating Temperature Max70°C
Product Range3.3V Parallel NAND Flash Memories
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Flash Memory Type
TLC NAND
Memory Size
512Gbit
Memory Configuration
64G x 8bit
IC Interface Type
Parallel
Memory Case Style
VBGA
Clock Frequency Max
333MHz
Access Time
-
Supply Voltage Max
-
Operating Temperature Max
70°C
SVHC
No SVHC (17-Jan-2023)
Memory Density
512Gbit
Flash Memory Configuration
64G x 8bit
Interfaces
Parallel
IC Case / Package
VBGA
No. of Pins
132Pins
Clock Frequency
333MHz
Supply Voltage Min
-
Operating Temperature Min
0°C
Product Range
3.3V Parallel NAND Flash Memories
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate