2ED2109S06FXUMA1

2ED2109S06FXUMA1 is a 650V half-bridge gate driver with an integrated bootstrap diode. It is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. There are not any parasitic thyristor structures present in the device, hence no parasitic latch-up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET, or IGBT in the high-side configuration, which operates up to 650V.

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Unique thin-film-silicon on insulator technology, independent undervoltage lockout for both channels
• Negative VS transient immunity of 100V, floating channel designed for bootstrap operation
• Operating voltages (VS node) upto + 650V, maximum bootstrap voltage (VB node) of + 675V
• Io+pk / Io-pk (typ.)=+ 0.29A/ - 0.7A, logic operational up to –11V on VS pin
• Low-side supply voltage range from 10V to 20V, internal 540ns deadtime, COM grounds pins
• IN, active low SD input logic, integrated ultra-fast, low resistance bootstrap diode
• Turn-on propagation delay is 740ns typ (VIN=0V or 5V, VS=0V, TA=25°C)
• Turn-off propagation delay is 200ns typ (VIN=0V or 5V, VS=0V, TA=25°C)
• DSO - 8 package, ambient temperature range from -40 to 125°C