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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF8302MTRPBF
Newark Part No.39AH8950
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id190A
On Resistance Rds(on)0.0014ohm
Drain Source On State Resistance1400µohm
Transistor Case StyleWDSON
Transistor MountingSurface Mount
Power Dissipation Pd104W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation104W
No. of Pins5Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0014ohm
Transistor Case Style
WDSON
Power Dissipation Pd
104W
Gate Source Threshold Voltage Max
1.8V
No. of Pins
5Pins
Product Range
HEXFET
SVHC
No SVHC (27-Jun-2018)
Channel Type
N Channel
Continuous Drain Current Id
190A
Drain Source On State Resistance
1400µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate